High-power-density 4H-SiC RF MOSFETs

IEEE Electron Device Letters

Volumn 27, Issue 6, 2006, Pages 469-471

  Gudjonsson G ^a   Allerstam, F ^a   Olafsson H O ^a   Nilsson, P A ^a   Hjelmgren, H ^a   Andersson, K ^a   Sveinbjornsson E O ^a   Zirath, H ^a   Rodle T ^a   Jos, R ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Microwave application; MOSFET; Silicon carbide

Indexed keywords

ELECTRIC POTENTIAL; GATES (TRANSISTOR); MESFET DEVICES; SILICON CARBIDE;

DOUBLE GATE FINGER; MICROWAVE APPLICATION; SINGLE DRAIN FINGER;

MOSFET DEVICES;

EID: 33744822776     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.875725     Document Type: Article

References (7)

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