Microstructural aspects and mechanism of degradation of 4H-SiC PiN diodes under forward biasing

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 91-102

  Pirouz, Pirouz ^a   Zhang, Ming ^a   Galeckas, Augustinas ^b   Linnros, Jan ^b  

^a Case Western Reserve University   (United States)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ELECTRIC FIELDS; ELECTROLUMINESCENCE; ELECTRON MOBILITY; ELECTRONIC EQUIPMENT; MICROSTRUCTURE; MOSFET DEVICES; PHYSICAL VAPOR DEPOSITION; POWER TRANSMISSION; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

BANDGAP; ELECTRIC DEGRADATION; HIGH FREQUENCY DEVICES; POWER SWITCHING;

SEMICONDUCTOR MATERIALS;

EID: 12844276714     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-815-j6.1     Document Type: Conference Paper

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