Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer

Journal of Electronic Materials

Volumn 36, Issue 5, 2007, Pages 539-542

  Zhang, Z ^a   Stahlbush, R E ^b   Pirouz, P ^c   Sudarshan, T S ^a  

^a The Department of Mechanical Engineering   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c Case Western Reserve University   (United States)

Author keywords

Chemical vapor deposition; Dislocation; Epitaxial growth; Epitaxy; Half loop; Silicon carbide (SiC)

Indexed keywords

DISLOCATION HALF-LOOPS; EPILAYER DEPTHS; HALF-LOOP ARRAYS (HLA);

ANNEALING; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; SILICON CARBIDE;

DISLOCATIONS (CRYSTALS);

EID: 34249107730     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0129-1     Document Type: Article

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