Monte carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6923, Issue , 2008, Pages

  Saeki, Akinori ^a   Kozawa, Takahiro ^a   Tagawa, Seiichi ^a   Cao, Heidi B ^b   Deng, Hai ^b   Leeson, Michael J ^b  

^a OSAKA UNIVERSITY   (Japan)

^b INTEL CORPORATION   (United States)

Author keywords

Chemically amplified resist; Development process; Line edge roughness; Monte carlo simulation

Indexed keywords

ACID DIFFUSIONS; ACID GENERATIONS; CHEMICAL INTERMEDIATES; CHEMICALLY AMPLIFIED RESIST; CHEMICALLY AMPLIFIED RESISTS; DEVELOPMENT PROCESS; DEVELOPMENT PROCESSES; EXTREME ULTRAVIOLETS; HIGH FREQUENCIES; LINE EDGE ROUGHNESS; LINE EDGE ROUGHNESSES; MONTE CARLO SIMULATION; MONTE CARLO SIMULATIONS; ON LINES; OPTICAL LITHOGRAPHIES; PATTERNED FEATURES; PROCESS CONDITIONS;

ACIDS; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; MONTE CARLO METHODS; PHOTOLITHOGRAPHY; PHOTORESISTORS; ROUGHNESS MEASUREMENT;

PHOTORESISTS;

EID: 57349172112     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.772174     Document Type: Conference Paper

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