Well-behaved metal-oxide-semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor-liquid hybrid deposition process

Applied Physics Letters

Volumn 84, Issue 25, 2004, Pages 5097-5099

  Xuan, Y ^a   Hojo, D ^a   Yasuda, T ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; BINDING ENERGY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRIC POTENTIAL; ELECTRODES; HAFNIUM COMPOUNDS; HYDROLYSIS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); PRECURSORS; ROOM TEMPERATURE; VAPOR LIQUID HYBRID DEPOSITION (VALID);

MOS CAPACITORS;

EID: 3142740863     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1762977     Document Type: Article

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