Temperature-dependent current-voltage characteristics of Cr/n-GaAs Schottky diodes

Microelectronic Engineering

Volumn 86, Issue 1, 2009, Pages 111-116

  Korkut, H ^a   Yildirim, N ^a   Turut, A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier inhomogeneity; GaAs; Metal semiconductor metal contacts; Schottky barrier height; Schottky diodes

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM ALLOYS; PHOTODETECTORS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR METAL BOUNDARIES;

ABNORMAL BEHAVIORS; BARRIER HEIGHT VALUES; BARRIER INHOMOGENEITY; CIRCULAR PATCHES; CURRENT FLOWS; DC MAGNETRON SPUTTERING; FLAT BANDS; GAAS; HIGH TEMPERATURES; IDEALITY FACTORS; LINEAR RELATIONSHIPS; LOW TEMPERATURES; N VALUES; SCHOTTKY BARRIER HEIGHT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; STRAIGHT LINES; TE MODELS; TEMPERATURE CO-EFFICIENT; TEMPERATURE RANGES; VOLTAGE CHARACTERISTICS;

SCHOTTKY BARRIER DIODES;

EID: 57049094381     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.10.005     Document Type: Article

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