Conduction via deep levels in Si Schottky diodes

Semiconductor Science and Technology

Volumn 12, Issue 8, 1997, Pages 1016-1027

  Simeonov, S S ^a   Kafedjiiska, E ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC SPACE CHARGE; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; ENERGY GAP; SEMICONDUCTOR METAL BOUNDARIES; SILICON WAFERS; THERMAL EFFECTS;

CONSTANT ENERGY DISTRIBUTION;

SCHOTTKY BARRIER DIODES;

EID: 0031207670     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/8/015     Document Type: Article

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