Effect of temperature and electron irradiation on the I-V characteristics of Au/CdTe Schottky diodes

Solar Energy

Volumn 81, Issue 1, 2007, Pages 111-116

  Pattabi, Manjunatha ^a   Krishnan, Sheeja ^a   Ganesh, ^a   Mathew, X ^b  

^a MANGALORE UNIVERSITY   (India)

^b INSTITUTO DE ENERGÍAS RENOVABLES   (Mexico)

Author keywords

CdTe; Electrodeposition; Electron irradiation; I V characteristics; Schottky diode

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODEPOSITION; ELECTRON IRRADIATION; EVAPORATION; STAINLESS STEEL; THERMAL EFFECTS;

BARRIER HEIGHT; DIODE IDEALITY FACTOR; SERIES RESISTANCE;

SCHOTTKY BARRIER DIODES;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRODEPOSITION; ELECTRON IRRADIATION; EVAPORATION; SCHOTTKY BARRIER DIODES; STAINLESS STEEL; THERMAL EFFECTS;

CADMIUM; ELECTRICAL RESISTIVITY; ELECTROCHEMICAL METHOD; GOLD; IRRADIATION; STEEL; TELLURIUM; TEMPERATURE;

EID: 33846031406     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2006.06.004     Document Type: Article

References (26)

1. Anthony T.C., Fahrenbruck A.L., Peters M.C., and Bube R.H. Electrical properties of CdTe films and junctions. J. Appl. Phys. 57 (1985) 400-410
2. Batzner, D.L., Romeo, A., Dobeli, M., Weinert, K., Zogg, H., Tiwari, A.N., 2001. Radiation hardness of CdTe/CdS solar cells. Presented at the 17th PVSEC, Munich, OA9.3.
3. Bayhan H., and Ercelebi C. Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices. Semicond. Sci. Technol. 12 5 (1997) 600-608
4. Bryant F.J., and Cox A.F.J. Atomic displacement energies for binary semiconductors. J. Phys. C (Proc. Phys. Soc.) 1 2 (1968) 1734-1736
5. Bryant F.J., Cox A.F.J., and Webster E. Atomic displacements and the nature of band edge radiative emission in cadmium telluride. J. Phys. C (Proc. Phys. Soc.) 1 2 (1968) 1737-1745
6. Bryant F.J., Totterdell D.H.J., and Hangston W.E. Identification of edge and exciton emission centres in CdTe. J. Phys. C: Solid State Phys. 4 (1971) 641-653
7. 2Si/p-Si (1 1 1) Schottky diodes in a wide temperature range. Semicond. Sci. Technol. 10 (1995) 1680-1688
8. Cullity B.D. Elements of X-Ray Diffraction. second ed. (1967), Addison-Wesley, California p. 99
9. Dharmadasa I.M., Roberts G.G., and Petty M.C. Electrical properties of Au/n-CdTe Schottky diodes. J. Phys. D. Appl. Phys. 15 (1982) 901-910
10. Goodman S.A., Auret F.D., Plessis M.du., and Meyer W.E. The influence of high energy alpha-particle irradiation on the spectral and defect properties of a Si photovoltaic detector. Semicond. Sci. Technol. 14 (1999) 323-326
11. Gumus A., Turut A., and Yalcin N. Temperature dependent barrier characteristics of CrNiCo alloy Schottky contacts on n-type molecular-beam epitaxy GaAs. J. Appl. Phys. 91 1 (2002) 245-250
12. Gurumurthy S., Bhat H.L., and Kumar V. Excellent rectifying characteristics in Au/n-CdTe diodes upon exposure to rf nitrogen plasma. Semicond. Sci. Technol. 14 (1999) 909-914
13. 0.2:H/c-Si) heterojunction diodes. Semicond. Sci. Technol. 13 (1998) 1148-1153
14. Mathew X. Opto-electronic properties of an Au/CdTe device. Semicond. Sci. Technol. 18 (2003) 1-6
15. Mathew X., Sebastian P.J., Sanchez A., and Campos J. Structural and opto-electronic properties of electrodeposited CdTe on stainless steel foil. Solar Energy Mater. Solar Cells 59 (1999) 99-114
16. Mathew X., Enrique J.P., Sebastian P.J., Pattabi M., Sanchez-Juarez A., Campos J., McClure J.C., and Singh V.P. Charge transport mechanism in a typical Au/CdTe Schottky diode. Solar Energy Mater. Solar Cells 63 (2000) 355-365
17. Olesen H.L. Radiation Effects on Electronic Systems (1966), Plenum, New York p. 72
18. Raynaud C., Isoird K., Lazar M., Johnson C.M., and Wright N. Barrier height determination of SiC Schottky diodes by capacitance and current-voltage measurements. J.Appl. Phys. 91 12 (2002) 9841-9847
19. Sullivan J.P., Tung R.T., Pinto M.R., and Graham W.R. Electron transport of inhomogeneous Schottky barriers: a numerical study. J. Appl. Phys. 70 (1991) 7403-7424
20. Sze S.M. Physics of Semiconductor Devices. second ed. (1981), Wiley Interscience, New York pp. 255-262
21. Taguchi T., and Inuishi Y. Radiation-induced defects and their annealing behaviour in cadmium telluride. J. Appl. Phys. 51 9 (1980) 4757-4769
22. Tugluoglu N., Karadeniz S., Sahin M., and Safak H. Temperature dependence of current-voltage characteristics of Ag/p-SnSe Schottky diodes. Appl. Surf. Sci. 233 (2004) 320-327
23. Tung R.T. Electron transport at metal-semiconductor interfaces: general theory. Phys. Rev. B 45 (1992) 13509-13523
24. Van Meirhaeghe R.L., Van de Walle R., Laflere W.H., and Cardon F. On the relationship between the surface composition of the substrate and the Schottky barrier height in Au/n-CdTe contacts. J. Appl. Phys. 70 4 (1991) 2200-2203
25. Wysocki J.J., and Rapport R. Effect of temperature on photovoltaic solar energy conversion. J. Appl. Phys. 31 3 (1960) 571-578
26. Zoutendyk J.A., Goben C.A., and Berdent D.F. Comparison of the degradation effects of heavy ion, electron and Cobalt 60 irradiation in an advanced bipolar process. IEEE Trans. Nucl. Sci. 35 6 (1988) 1428-1431