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Applied Surface Science

Volumn 252, Issue 4, 2005, Pages 1153-1158

Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes

(3) Ayyildiz, Enise a Cetin, Hidayet a Horvath Zs J b

a ERCIYES UNIVERSITY (Turkey)

b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

Author keywords

Current voltage and capacitance voltage characteristics; Schottky junctions; Thermionic field emission

Indexed keywords

CAPACITANCE; CONCENTRATION (PROCESS); ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ENERGY ABSORPTION; TEMPERATURE DISTRIBUTION; THERMIONIC EMISSION;

BARRIER HEIGHT; CURRENT-VOLTAGE AND CAPACITANE-VOLTAGE CHARACTERISTICS; SCHOTTKY JUNCTIONS; THERMIONIC-FIELD EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 26444519781 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2005.02.044 Document Type: Article

Times cited : (68)

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