On the difference in the apparent barrier height of inhomogeneous Schottky diodes with a Gaussian distribution

Semiconductor Science and Technology

Volumn 22, Issue 4, 2007, Pages 369-373

  Rouag, N ^a   Boussouar, L ^b   Toumi, S ^b   Ouennoughi, Z ^b   Djouadi, M A ^a  

^a INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

^b FERHAT ABBAS UNIVERSITY   (Algeria)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GAUSSIAN DISTRIBUTION; MATHEMATICAL MODELS; NUMERICAL METHODS;

CURRENT VOLTAGE (I-V) EXPRESSION; DIODE PARAMETERS; NEGATIVE APPARENT BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 34047205762     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/4/012     Document Type: Article

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