Improvement of thermal stability and composition changes of atomic layer deposited HfO2 on Si by in situ O3 pretreatment

Applied Physics Letters

Volumn 90, Issue 15, 2007, Pages

  Park, Tae Joo ^c   Kim, Jeong Hwan ^c   Seo, Min Ha ^c   Jang, Jae Hyuck ^c   Hwang, Cheol Seong ^a,b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DEPOSITION; IN SITU PROCESSING; SILICON; STRUCTURE (COMPOSITION); THERMODYNAMIC STABILITY;

INFERIOR STABILITY; POSTDEPOSITION ANNEALING; PREDEPOSITION TREATMENT; SILICATE FORMATION;

HAFNIUM COMPOUNDS;

EID: 34247196732     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2721845     Document Type: Article

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