Analytical model for threshold voltage and I-V characteristics of fully depleted short channel cylindrical/surrounding gate MOSFET

Microelectronic Engineering

Volumn 56, Issue 3-4, 2001, Pages 241-259

  Kranti, Abhinav ^a   Haldar, S ^b   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

Double gate MOSFET; MOSFET; Short channel effects; Surrounding Cylindrical gate MOSFET

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); POISSON EQUATION; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRAIN RESISTANCE; SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0035422376     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00419-6     Document Type: Article

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