Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors

Applied Physics Letters

Volumn 81, Issue 19, 2002, Pages 3672-3674

  Fiori, G ^a   Iannaccone, G ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; COMPACT MODEL; DIRECT-CURRENT; EFFECTIVE MASS; ELECTRON CONFINEMENT; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOS-FET; MOSFETS; NANO SCALE; NANOSCALE DEVICE; NANOSCALE MOSFETS; PHYSICS-BASED; QUANTUM SIMULATIONS; TWO-DIMENSION;

BALLISTICS; CODES (SYMBOLS); DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; NANOTECHNOLOGY; PERSONAL COMPUTERS; PLASMA CONFINEMENT; QUANTUM CHEMISTRY; TRANSISTORS;

MOSFET DEVICES;

EID: 79956060627     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519349     Document Type: Article

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