Relaxed InxGa1-xAs graded buffers grown with organometallic vapor phase epitaxy on GaAs

Applied Physics Letters

Volumn 72, Issue 13, 1998, Pages 1608-1610

  Bulsara, Mayank T ^a   Leitz, Chris ^a   Fitzgerald, Eugene A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001213576     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121129     Document Type: Article

References (6)

1. T. Uchida, H. Kurakake, H. Soda, and S. Yamazaki, J. Electron. Mater. 12, 581 (1996).
2. E. A. Fitzgerald, Y.-H. Xie, D. Monroe, P. J. Silverman, J. M. Kuo, A. R. Kortan, F. A. Thiel, and B. E. Weir, J. Vac. Sci. Technol. B 10, 1807 (1992).
3. K. C. Hsieh and K. Y. Cheng, Mater. Res. Soc. Symp. Proc. 379, 145 (1995).
4. S. N. G. Chu, S. Nakahara, K. E. Strege, and W. D. Johnston, Jr., J. Appl. Phys. 57, 4610 (1985).
5. M. Bulsara, V. Yang, A. Thilderkvist, K. Haüsler, K. Eberl, and E. A. Fitzgerald, J. Appl. Phys. 83, 592 (1998).
6. S. Samavedam and E. A. Fitzgerald, J. Appl. Phys. 81, 3108 (1997).