Importance of controlling oxygen incorporation into Hf O2 Sin-GaAs gate stacks

Journal of Applied Physics

Volumn 101, Issue 3, 2007, Pages

  Zhang, M H ^a   Oye, M ^a   Cobb, B ^a   Zhu, F ^a   Kim, H S ^a   Ok, I J ^a   Hurst, J ^a   Lewis, S ^a   Holmes, A ^a   Lee, J C ^a   Koveshnikov, S ^b   Tsai, W ^b   Yakimov, M ^c   Torkanov, V ^c   Oktyabrsky, S ^c  

^a The University of Texas at Austin   (United States)

^b INTEL CORPORATION   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE MEASUREMENT; MOSFET DEVICES; OXYGEN; PHOTOLUMINESCENCE; X RAY PHOTOELECTRON SPECTROSCOPY;

CAPACITANCE VOLTAGE MEASUREMENT; GATE STACKS; HIGH TEMPERATURE ANNEALING; INTERFACIAL CHANGE;

GALLIUM COMPOUNDS;

EID: 33847101769     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2432479     Document Type: Article

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