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Volumn 20, Issue 6, 2002, Pages 1867-1876

Angle-resolved x-ray photoelectron spectroscopy of ultrathin Al2O3 films grown by atomic layer deposition

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DEFECTS; DEPOSITION; HEATING FURNACES; INTERFACES (MATERIALS); NITROGEN; OXIDATION; RAPID THERMAL ANNEALING; SILICA; SILICATES; ULTRAHIGH VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0036864261     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1507330     Document Type: Article
Times cited : (112)

References (25)
  • 2
    • 85008499097 scopus 로고    scopus 로고
    • Porto Alegre, Brasil (to be published)
    • For a recent review of high-κ gate dielectrics, see also the International Workshop on Device Technology Proceedings (Porto Alegre, Brasil, 2001) (to be published).
    • (2001) International Workshop on Device Technology Proceedings
  • 9
  • 17
    • 85008504967 scopus 로고    scopus 로고
    • note
    • 3).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.