Physical and electrical properties of plasma nitrided germanium oxynitride

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 5, 2006, Pages 2449-2456

  Sugawara, Takuya ^a,b   Sreenivasan, Raghavasimhan ^b   McIntyre, Paul C ^b  

^a TOKYO ELECTRON LTD   (Japan)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE REDUCTION; PLASMA NITRIDED GERMANIUM OXYNITRIDE (GEON); RADIAL LINE SLOT ANTENNA (RLSA); SILICON OXYNITRIDE (SION);

CHEMICAL BONDS; ELECTRIC PROPERTIES; INDUCTIVELY COUPLED PLASMA; MOS CAPACITORS; PHYSICAL PROPERTIES; PLASMA APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

GERMANIUM COMPOUNDS;

EID: 33749366238     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2348886     Document Type: Article

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