Band offsets of HfO2/GeON/Ge stacks measured by ultraviolet and soft x-ray photoelectron spectroscopies

Applied Physics Letters

Volumn 90, Issue 5, 2007, Pages

  Martinez, E ^a   Renault, O ^a   Fourdrinier, L ^a   Clavelier, L ^a   Le Royer, C ^a   Licitra, C ^a   Veyron, T ^a   Hartmann, J M ^a   Loup, V ^a   Vandroux, L ^a   Guittet, M J ^b   Barrett, N ^b  

^a CEA LETI   (France)

^b CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GERMANIUM COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SYNCHROTRON RADIATION; ULTRAVIOLET SPECTROSCOPY;

BAND GAP; HFO2GEON/GE STACKS; VALENCE BAND OFFSET;

HAFNIUM COMPOUNDS;

EID: 33846961763     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2437096     Document Type: Article

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