Potentiometry on pentacene OFETs: Charge carrier mobilities and injection barriers in bottom and top contact configurations

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 3, 2008, Pages 591-599

  Scholz, R ^a   Lehmann, D ^b   Muller A D ^c   Muller F ^c   Zahn, D R T ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^c Anfatec Instruments AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BACKGROUND DENSITIES; BOTTOM CONTACTS; CHANNEL REGIONS; CHARGE TRANSIENT SPECTROSCOPIES; CHEMICAL TREATMENTS; DENSITY OF STATES; DEVICE PERFORMANCES; DEVICE SIMULATIONS; ELECTRICAL PROBES; EXPERIMENTAL TECHNIQUES; GATE OXIDES; HIGH DENSITIES; HOLE TRANSPORTS; INJECTION BARRIERS; LOWER DENSITIES; METAL WORK FUNCTIONS; OCTADECYTRICHLOROSILANE; ORGANIC; PENTACENE; POTENTIOMETRY; SOURCE CONTACTS; TRAP LEVELS;

CARRIER MOBILITY; CIVIL AVIATION; ELECTRONIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); HOLE MOBILITY; METAL REFINING; POTENTIOMETERS (ELECTRIC MEASURING INSTRUMENTS); SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS;

CHARGE CARRIERS;

EID: 54849409054     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723415     Document Type: Article

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