Experimental evidence for complementary spatial sensitivities of capacitance and charge deep-level transient spectroscopies

Semiconductor Science and Technology

Volumn 15, Issue 4, 2000, Pages 378-385

  Thurzo, I ^a   Beyer, R ^b   Zahn, D R T ^b  

^a INSTITUTE OF PHYSICS   (Slovakia)

^b CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHROMIUM; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; FERMI LEVEL; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

CHARGE DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS);

SCHOTTKY BARRIER DIODES;

EID: 0033885376     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/4/312     Document Type: Article

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