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Because the disorder is present at both the hole-injecting (source) and hole-receiving (drain) contacts, there is naturally a contact resistance associated with each of the Au/6T contacts. However, because of the energy band offsets, the contact resistance at the reverse-biased hole injecting contact is always higher
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Because the disorder is present at both the hole-injecting (source) and hole-receiving (drain) contacts, there is naturally a contact resistance associated with each of the Au/6T contacts. However, because of the energy band offsets, the contact resistance at the reverse-biased hole injecting contact is always higher.
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2) square of [thermally conductive] sapphire
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2 (Richardson plots). In assessing the validity of the temperature dependence assumptions for both thermionic emission and drift/diffusion, we looked at various temperature dependences and corresponding Arrhenius plots. The magnitude of the barrier changed with the temperature dependence, but this did not affect which model best fit the experimental data.
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In conventional silicon p-FETs, the holes originate from the bulk silicon so that a conductive accumulation layer results when sufficiently negative voltages are applied. In our devices, there is no "bulk" 6T in the same sense as the silicon FET because the 6T crystals are only 1-6 molecular layers tall. The holes come from the source electrode
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