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Volumn 104, Issue 51, 2000, Pages 12202-12209

Field effect transport measurements on single grains of sexithiophene: Role of the contacts

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; GOLD; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; VAPOR DEPOSITION;

EID: 0034504597     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp002782o     Document Type: Article
Times cited : (86)

References (42)
  • 18
    • 33646037804 scopus 로고    scopus 로고
    • Because the disorder is present at both the hole-injecting (source) and hole-receiving (drain) contacts, there is naturally a contact resistance associated with each of the Au/6T contacts. However, because of the energy band offsets, the contact resistance at the reverse-biased hole injecting contact is always higher
    • Because the disorder is present at both the hole-injecting (source) and hole-receiving (drain) contacts, there is naturally a contact resistance associated with each of the Au/6T contacts. However, because of the energy band offsets, the contact resistance at the reverse-biased hole injecting contact is always higher.
  • 22
    • 33646030753 scopus 로고    scopus 로고
    • note
    • v. However, for the purpose of analysis we will assume that the temperature dependences just noted hold (see note 11).
  • 23
    • 85085673499 scopus 로고    scopus 로고
    • 2) square of [thermally conductive] sapphire
    • 2) square of [thermally conductive] sapphire.
  • 24
    • 33646057527 scopus 로고    scopus 로고
    • note
    • 2 (Richardson plots). In assessing the validity of the temperature dependence assumptions for both thermionic emission and drift/diffusion, we looked at various temperature dependences and corresponding Arrhenius plots. The magnitude of the barrier changed with the temperature dependence, but this did not affect which model best fit the experimental data.
  • 25
    • 85085674378 scopus 로고    scopus 로고
    • note
    • -3, which is the density of 6T molecules.
  • 29
    • 0342519320 scopus 로고    scopus 로고
    • This has been confirmed by potentiometry experiments in which potential drops at various points between the source and drain electrodes of a 6T grain FET were measured using a conducting AFM probe (Seshadri, K.; Frisbie, C. D. submitted for publication in Appl. Phys. Lett.
    • Appl. Phys. Lett.
    • Seshadri, K.1    Frisbie, C.D.2
  • 34
    • 33646018768 scopus 로고    scopus 로고
    • In conventional silicon p-FETs, the holes originate from the bulk silicon so that a conductive accumulation layer results when sufficiently negative voltages are applied. In our devices, there is no "bulk" 6T in the same sense as the silicon FET because the 6T crystals are only 1-6 molecular layers tall. The holes come from the source electrode
    • In conventional silicon p-FETs, the holes originate from the bulk silicon so that a conductive accumulation layer results when sufficiently negative voltages are applied. In our devices, there is no "bulk" 6T in the same sense as the silicon FET because the 6T crystals are only 1-6 molecular layers tall. The holes come from the source electrode.
  • 36
    • 0029707163 scopus 로고    scopus 로고
    • 5 Q-cm, which is comparable to the normalized contact resistance associated with 6T film devices. See (a) Lin, Y. Y.; Gundlach, D. J.; Jackson, T. N. MRSSymp. Proc. 1996,413 and
    • (1996) MRSSymp. Proc. , vol.413
    • Lin, Y.Y.1    Gundlach, D.J.2    Jackson, T.N.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.