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Volumn 95, Issue 3, 2004, Pages 1196-1202

Space charge limited transport and time of flight measurements in tetracene single crystals: A comparative study

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CRYSTAL GROWTH; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC SPACE CHARGE; ELECTRON TRANSPORT PROPERTIES; HOLE MOBILITY; HYDROCARBONS; PHOTOCHEMICAL REACTIONS; PHYSICAL VAPOR DEPOSITION; SPECTROSCOPY; VOLTAGE MEASUREMENT;

EID: 1142304505     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1631079     Document Type: Article
Times cited : (153)

References (23)
  • 6
    • 1142304137 scopus 로고    scopus 로고
    • note
    • BT from the edge of the valence band. Deep traps are further separated from the valence band.
  • 14
    • 1142292028 scopus 로고    scopus 로고
    • note
    • min this regime may not be visible, as the current is below the sensitivity of the measuring apparatus.
  • 15
    • 1142267781 scopus 로고    scopus 로고
    • note
    • I-V measurements performed on crystals that were regrown three or more times do not show a statistically significant difference from crystals that were regrown twice.
  • 17
    • 1142267779 scopus 로고    scopus 로고
    • note
    • The presence of stress is also responsible for entire crystals breaking into small pieces upon cooling to low temperature. The temperature at which crystals break can be very different for different crystals and it seems to depend on the cooling speed.
  • 19
    • 1142292026 scopus 로고    scopus 로고
    • note
    • min.
  • 20
    • 1142279916 scopus 로고    scopus 로고
    • note
    • BT) is of mirror importance for TOF experiments, contrary to the case of I-V measurements, since for these traps the relaxation time is much longer than the transit time, and holes captured by deep traps do not give any signal.
  • 21
    • 1142304138 scopus 로고    scopus 로고
    • note
    • Although the general trend in the T dependence of the mobility is similar in both the I-V and TOF experiments, the temperature at which the mobility reaches its optimum value is differnet. We suggest that the cause of this difference is that, in the case of I-V measurements, a much larger amount of charge is being injected, so that more (shallow) traps are filled.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.