Transport properties of single-crystal tetracene field-effect transistors with silicon dioxide gate dielectric

Applied Physics Letters

Volumn 85, Issue 3, 2004, Pages 422-424

  Newman, Christopher R ^a   Chesterfield, Reid J ^a   Merlo, Jeffrey A ^a   Frisbie, C Daniel ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; GATE DIELECTRICS; SPACE-CHARGE LIMITED CURRENT (SCLC) SPECTROSCOPY; THERMALLY INDUCED CRACKS;

CARRIER MOBILITY; CRACKS; CRYSTAL GROWTH; DIELECTRIC MATERIALS; PROBABILITY; SILICA; SINGLE CRYSTALS; SUBSTRATES; THERMAL EFFECTS; TRANSPORT PROPERTIES;

FIELD EFFECT TRANSISTORS;

EID: 4043135081     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1771466     Document Type: Article

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