Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

IEEE Electron Device Letters

Volumn 26, Issue 12, 2005, Pages 882-884

  Joo, Moon Sig ^a   Cho, Byung Jin ^a   Balasubramanian, N ^b   Kwong, Dim Lee ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Effective work function; Fermi level pinning; Fully silicided (FUSI) gate; High K; Ni silicided gate

Indexed keywords

BACKSCATTERING; ELECTRODES; GATES (TRANSISTOR); NICKEL COMPOUNDS; SPECTROMETRY; STOICHIOMETRY;

EFFECTIVE WORK FUNCTION; FERMI-LEVEL PINNING; FULLY SILICIDED (FUSI) GATE; NICKEL-SILICIDED GATE;

DIELECTRIC MATERIALS;

EID: 29244476905     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.859631     Document Type: Article

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