Physical and electrical properties of HfAlOx. Films prepared by atomic layer deposition using NH3/Ar plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7884-7889

  Kawahara, Takaaki ^a,b   Torii, Kazuyoshi ^a   Ohji, Hiroshi ^a   Mitsuhashi, Riichirou ^a   Muto, Akiyoshi ^a   Kim, Woosik ^a   Ito, Hiroyuki ^a   Kitajima, Hiroshi ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

Atomic layer deposition; CMOSFETs; HfAIO +inf+ x + inf+ IL gate stack; IL; Interfacial layer; Mobility; NH +inf+ 3 + inf+ Ar plasma

Indexed keywords

ARGON; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; HAFNIUM COMPOUNDS; MOSFET DEVICES; PLASMAS; THRESHOLD VOLTAGE;

ATOMIC LAYER DEPOSITION; HFALOX/IL GATE-STACK; INTERFACIAL LAYERS (IL); NH3/AR PLASMA;

THIN FILMS;

EID: 12844260113     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7884     Document Type: Conference Paper

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