Interfacial structures and electrical properties of HfAl2O 5 gate dielectric film annealed with a Ti capping layer

Applied Physics Letters

Volumn 90, Issue 15, 2007, Pages

  Cheng, Xinhong ^a   Wan, Li ^a   Song, Zhaorui ^b   Yu, Ehui ^b   Shen, DaShen ^c  

^a WENZHOU UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED FILMS; GATE DIELECTRIC FILMS; INTERFACIAL LAYERS; INTERFACIAL STRUCTURE;

ANNEALING; ELECTRIC PROPERTIES; GATE DIELECTRICS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 34247243717     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2722665     Document Type: Article

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