Microstructure and electrical characteristics of Ba0.65Sr0.35TiO3 thin films etched in CF4/Ar/O2 plasma

Microelectronic Engineering

Volumn 85, Issue 11, 2008, Pages 2269-2275

  Quan, Zuci ^a   Xu, Sheng ^a   Hu, Hao ^a   Liu, Wei ^a   Huang, Huiming ^a   Sebo, Bobby ^a   Fang, Guojia ^a   Li, Meiya ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

BST thin films; Electrical characteristics; Microstructure; Plasma induced damage

Indexed keywords

BARIUM; CAPACITANCE; CAPACITORS; DIELECTRIC DEVICES; ELECTRIC EQUIPMENT; ELECTRIC PROPERTIES; ETCHING; LEAKAGE CURRENTS; MICROSTRUCTURE; PHOTODEGRADATION; PLASMAS; THICK FILMS; THIN FILMS;

ATOMIC FORCES; BST FILMS; BST THIN FILMS; DIELECTRIC CONSTANTS; DIELECTRIC DISSIPATIONS; DIELECTRIC TUNABILITY; ELECTRICAL CHARACTERISTICS; ELECTRICAL PROPERTIES; ETCHING CHARACTERISTICS; FIGURE OF MERITS; MAGNETICALLY ENHANCED REACTIVE ION ETCHINGS; ORDERS OF MAGNITUDES; PLASMA-INDUCED DAMAGE; PLASMA-INDUCED DAMAGES; POSTANNEALED; RADIO FREQUENCIES; REMNANT POLARIZATIONS; X-RAY DIFFRACTIONS;

REACTIVE ION ETCHING;

EID: 54049131157     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.07.005     Document Type: Article

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