Electrical damage induced by reactive ion-beam etching of lead-zirconate-titanate thin films

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Soyer, C ^a   Cattan, E ^a   Rmiens D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATION VOLTAGE; ELECTRICAL DAMAGE; ETCH RATES; GAS MIXING RATIO; SURFACE DAMAGE;

ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; DEGRADATION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; ION BEAMS; LEAD COMPOUNDS; MIXING; PERMITTIVITY; REACTIVE ION ETCHING; SPUTTERING;

FERROELECTRIC THIN FILMS;

EID: 20744455065     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1923589     Document Type: Article

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