Characterization and elimination of dry etching damaged layer in Pt/Pb(Zr0.53Ti0.47)O3/Pt ferroelectric capacitor

Applied Physics Letters

Volumn 75, Issue 3, 1999, Pages 334-336

  Lee, June Key ^a   Kim, Tae Young ^a   Chung, Ilsub ^a   Desu, Seshu B ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COERCIVE FORCE; CRYSTAL MICROSTRUCTURE; DRY ETCHING; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; PEROVSKITE; PLATINUM; SEMICONDUCTING LEAD COMPOUNDS; THIN FILM DEVICES;

COERSIVE VOLTAGES; WET CLEANING TREATMENT;

CAPACITORS;

EID: 0032615136     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124367     Document Type: Article

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