Etch characteristics of ferroelectric (Bi4-XLa X)Ti3O12 thin films in an inductively coupled plasma

Integrated Ferroelectrics

Volumn 48, Issue , 2002, Pages 239-244

  Yoon, Jin Koo ^a   Byun, Yo Han ^a   Song, Young Soo ^a   Chung, Chee Won ^a   Lee, June Key ^b  

^a Inha University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Bismuth lanthanum titanate (Bi4 XLaX)Ti 3O12; Bismuth layer structured ferroelectric; Inductively coupled plasma etching

Indexed keywords

DEPOSITION; INDUCTIVELY COUPLED PLASMA; PEROVSKITE; PLASMA ETCHING; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY;

BISMUTH LANTHANUM TITANATE; BISMUTH LAYER-STRUCTURED FERROELECTRIC; INDUCTIVELY COUPLED PLASMA ETCHING;

FERROELECTRIC THIN FILMS;

EID: 33751183318     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/713718319     Document Type: Article

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