Etching characteristics and plasma-induced damage of Ba0.65Sr0.35TiO3 thin films etched in CF4/Ar/O2 plasma

Microelectronic Engineering

Volumn 84, Issue 4, 2007, Pages 631-637

  Quan, Zuci ^a   Zhang, Baishun ^a   Zhang, Tianjin ^a   Guo, Tao ^a   Pan, Ruikun ^a   Jiang, Juan ^a  

^a HUBEI UNIVERSITY   (China)

Author keywords

BST thin film; Chemical shifts; Etch rate; Plasma induced damage

Indexed keywords

BARIUM TITANATE; PLASMA ETCHING; RAMAN SCATTERING; SOL-GEL PROCESS; SURFACE PROPERTIES; X RAY PHOTOELECTRON SPECTROSCOPY;

BST THIN FILM; CHEMICAL SHIFTS; ETCH RATE; PLASMA-INDUCED DAMAGE;

THIN FILMS;

EID: 33847660936     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.12.007     Document Type: Article

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