Progress in fabrication technologies of polycrystalline-silicon thin-film transistors at low temperatures

Journal of the Society for Information Display

Volumn 13, Issue 3, 2005, Pages 233-239

  Sameshima, Toshiyuki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Carrier mobility; Defect passivation; Laser crystallization; MIC; MILC; Threshold voltage

Indexed keywords

CIVIL AVIATION; CRYSTAL GROWTH; CRYSTALLIZATION; DEFECT DENSITY; GRAIN BOUNDARIES; HEAT TREATMENT; NANOCRYSTALLINE ALLOYS; NANOSTRUCTURED MATERIALS; OXYGEN; PASSIVATION; PHASE INTERFACES; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SILICON; SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; TRANSPORT PROPERTIES;

CRYSTALLINE GRAINS; DEFECT PASSIVATION; DENSITY OF DEFECTS; FABRICATION PROCESSES; FABRICATION TECHNOLOGIES; INDUCED MOLTEN; LASER CRYSTALLIZATION; LOW TEMPERATURES; LOW THERMAL BUDGETS; MIC; MILC; PHASE CRYSTALLIZATIONS; POLYCRYSTALLINE; RAPID CRYSTALLIZATIONS; SILICON FILMS;

CARRIER MOBILITY;

EID: 54049103587     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/1.2012611     Document Type: Article

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