Study of crystal growth in grain-filters for location-controlled excimer laser crystallization

Materials Research Society Symposium Proceedings

Volumn 685, Issue , 2001, Pages 186-191

  Van Der Wilt, Paul Ch ^a   Van Dijk, B D ^a   Bertens, G J ^a   Ishihara, R ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; EXCIMER LASERS; GRAIN GROWTH; SOLIDIFICATION; THIN FILM TRANSISTORS;

GROWTH VELOCITY; MELT DEPTH; PULSE DURATIONS;

THIN FILMS;

EID: 34249869019     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. P.Ch. van der Wilt, R. Ishihara, and G.J. Bertens, Mater. Res. Soc. Proc. 621 (2000) Q7.4.1-Q7.4.6.
2. B. Chalmers, Principles of Solidification, (John Wiley & Sons, New York 1964) 98.
3. J.H. Yoon, J.S. Im, Metals and Materials 5 (1999) 525.
4. A.J. van Roosmalen, J.A.G. Baggerman, and S.J.H. Brader, Dry Etching for VLSI, (Plenum Press, New York, 1991) 102-110.
5. B.D. van Dijk, P.Ch. van der Wilt, G.J. Bertens, L.K. Nanver, and R. Ishihara, presented elsewhere in this symposium.
6. V.V. Gupta, H.J. Song, and J.S. Im, Appl. Phys. Lett. 71 (1997) 99-101.
7. J.P. Leonard and J.S. Im, Mater. Res. Soc. Proc. 580 (1999) 233-244.
8. A.G. Cullis, N.G. Chew, H.C. Webber, and D.J. Smith, J. Cryst. Growth 68 (1981) 624.