Heat treatment with high-pressure H2O vapor of pulsed laser crystallized silicon films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 7 A, 2000, Pages 3883-3887

  Asada, Katsumi ^a   Sakamoto, Keiji ^a   Watanabe, Tadashi ^a   Sameshima, Toshiyuki ^a   Higashi, Seiichiro ^b  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

Author keywords

Activation energy; Carrier density; Defect density; Laser crystallization; Potential barrier height

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; GRAIN BOUNDARIES; HIGH PRESSURE EFFECTS; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; PULSED LASER APPLICATIONS; SEMICONDUCTOR DOPING; STATISTICAL METHODS; SUBSTRATES;

DEFECT DENSITY; HIGH PRESSURE WATER VAPOR; POTENTIAL BARRIER HEIGHT; PULSED LASER CRYSTALLIZED SILICON FILMS; QUARTZ GLASS SUBSTRATES; SPIN DENSITY;

THIN FILM TRANSISTORS;

EID: 0034215527     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.3883     Document Type: Article

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