Passivation of SiO2/Si interfaces using high-pressure-H2O-vapor heating

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 5 A, 2000, Pages 2492-2496

  Sakamoto, Keiji ^a   Sameshima, Toshiyuki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Activation energy for oxidation; Density of interface trap state; Si O Si bonding state; SiOx; Surface recombination velocity

Indexed keywords

ACTIVATION ENERGY; CHEMICAL BONDS; ELECTRON TRANSITIONS; ELECTRONIC DENSITY OF STATES; EVAPORATION; HEAT TREATMENT; INTERFACES (MATERIALS); OXIDATION; PASSIVATION; SILICA; SILICON WAFERS; WATER;

CARRIER RECOMBINATION; DANGLING BONDS;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 0033699937     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2492     Document Type: Article

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