Passivation Kinetics of Two Types of Defects in Polysilicon TFT by Plasma Hydrogenation

IEEE Electron Device Letters

Volumn 12, Issue 4, 1991, Pages 181-183

  Wu, I Wei ^a   Huang, Tiao Yuan ^a   Jackson, Warren B ^a   Lewis, Alan G ^a   Chiang, Anne ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRONS - RESONANCE; SEMICONDUCTING FILMS - CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON - HYDROGENATION; SEMICONDUCTOR MATERIALS - GRAIN BOUNDARIES;

LOW PRESSURE CVD; PASSIVATION KINETICS; PLASMA HYDROGENATION; POLYSILICON THIN-FILM TRANSISTORS;

SOLID STATE DEVICES, THIN FILM;

EID: 0026140319     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.75757     Document Type: Article

References (12)

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