Electrical properties of pulsed laser crystallized silicon films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 A, 1999, Pages 1892-1897

  Sameshima, Toshiyuki ^a   Saitoh, Keiko ^a   Aoyama, Naho ^a   Higashi, Seiichiro ^b   Kondo, Michio ^c   Matsuda, Akihisa ^c  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^b SEIKO EPSON CORPORATION   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Carrier density; Carrier mobility; E2 peak height; Free carrier absorption; Hall effect; Optical absorption spectra

Indexed keywords

EID: 0342418706     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1892     Document Type: Article

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