Polycrystalline silicon thin-film transistors fabricated by defect reduction methods

IEEE Transactions on Electron Devices

Volumn 49, Issue 12, 2002, Pages 2217-2221

  Watakabe, H ^a   Sameshima, T ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Carrier density; Carrier mobility; Defect; H2O vapor; Interface; Laser crystallization; Oxygen plasma

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTAL DEFECTS; CRYSTALLIZATION; EXCIMER LASERS; HEAT TREATMENT; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; PLASMAS; POLYSILICON; PRESSURE EFFECTS; SEMICONDUCTOR DEVICE MANUFACTURE;

DEFECT REDUCTION METHODS; LASER CRYSTALLIZATION; OXYGEN PLASMA; POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 0036999686     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.805234     Document Type: Article

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