Stress in pulsed-laser-crystallized silicon films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 A, 2001, Pages 731-735

  Higashi, Seiichiro ^a   Ando, Nobuyuki ^b   Kamisako, Koichi ^b   Sameshima, Toshiyuki ^b  

^a SEIKO EPSON CORPORATION   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Laser crystallization; Polycrystalline silicon; Raman scattering; Stress; Thin film transistors

Indexed keywords

CRYSTALLIZATION; PHONONS; PULSED LASER DEPOSITION; RAMAN SCATTERING; TENSILE STRESS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH RESOLUTION RAMAN SCATTERING; LASER IRRADIATION; PULSED LASER CRYSTALLIZATION; SILICON FILMS;

THIN FILM TRANSISTORS;

EID: 0035245889     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.731     Document Type: Article

References (11)