Rapid joule heating of metal films used to crystallize silicon films

Applied Physics A: Materials Science and Processing

Volumn 74, Issue 6, 2002, Pages 719-723

  Sameshima, T ^a   Kaneko, Y ^a   Andoh, N ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHROMIUM; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CRYSTALLIZATION; HEATING; HIGH TEMPERATURE EFFECTS; SILICA; THERMODYNAMIC PROPERTIES; THIN FILMS;

ELECTRICAL CURRENT FLOW; JOULE HEATING; TEMPERATURE GRADIENT;

SILICON;

EID: 0036604371     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390101138     Document Type: Article

References (16)