New Method to Form High-Quality Poly-Si Films by Selectively Enlarging Laser Crystallization

Solid State Phenomena

Volumn 93, Issue , 2003, Pages 185-190

  Tai, Mitsuharu ^a   Hatano, Mutsuko ^a   Yamaguchi, Shinya ^a   Park, Seong Kee ^a   Noda, Takeshi ^a   Hongo, Mikio ^a   Shiba, Takeo ^a   Ohkura, Makoto ^a  

^a HITACHI LTD   (Japan)

Author keywords

Laser Crystallization; Polycrystalline Silicon; Pulsed Laser; Selectively Enlarging Laser Crystallization; Thin Film Transistor

Indexed keywords

CRYSTALLIZATION; GRAIN SIZE AND SHAPE; POLYSILICON; PULSED LASER APPLICATIONS; SURFACE ROUGHNESS; THIN FILM TRANSISTORS;

ENLARGING LASER CRYSTALLIZATION;

THIN FILMS;

EID: 0242413034     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (3)

1. R. S. Sposili and J. S. Im, Appl. Phys. Lett. 69 2864 (1996)
2. M. A. Crowder, P. G. Carey, P. M. Smith, R. S. Sposili, H. S. Cho and J. S. Im, IEEE Electron Device Lett. 19 760 (1998)
3. A. Hara, F. Takeuchi, M. Takei, K. Suga, K. Yoshino, M. Chida, Y. Sano and N. Sasaki, IEDM Technical Digest. International, p. 34.2_1 (2001)