Effect of polishing pad with holes in electro-chemical mechanical planarization

Microelectronic Engineering

Volumn 85, Issue 11, 2008, Pages 2236-2242

  Jeong, Sukhoon ^a   Lee, Sangjik ^a   Jeong, Haedo ^a  

^a Pusan National University   (South Korea)

Author keywords

ECA (electric contact area); ECMP; Material removal rate (MRR) profile; Polishing pad with hole; Within wafer non uniformity (WIWNU); WOD (wafer overhang distance)

Indexed keywords

CHEMICAL MECHANICAL POLISHING; COPPER; COPPER COMPOUNDS; DIELECTRIC MATERIALS; ELECTRIC CONNECTORS; ELECTRIC SWITCHGEAR; ELECTROLYSIS; ELECTROLYTES; METAL IONS; METAL RECOVERY; POLISHING; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON WAFERS; TUNGSTEN;

ECA (ELECTRIC CONTACT AREA); ECMP; MATERIAL REMOVAL RATE (MRR) PROFILE; POLISHING PAD WITH HOLE; WITHIN WAFER NON-UNIFORMITY (WIWNU); WOD (WAFER OVERHANG DISTANCE);

CHEMICAL POLISHING;

EID: 53849123295     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.07.006     Document Type: Article

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