Enhancement of adhesion strength of Cu layer on single and multi-layer dielectric film stack in Cu/low k multi-level interconnects

Microelectronic Engineering

Volumn 75, Issue 2, 2004, Pages 183-193

  Balakumar, S ^a   Wong, Grace ^a,b   Tsang, Chi Fo ^a   Hara, T ^c   Yoo, W J ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c HOSEI UNIVERSITY   (Japan)

Author keywords

Adhesion strength; Cu interconnects; Cu seed layer; Stress and multi stack

Indexed keywords

ACOUSTIC EMISSIONS; ADHESION; ANNEALING; BONDING; CHEMICAL MECHANICAL POLISHING; COPPER; DELAMINATION; ELECTROPLATING; FILM GROWTH; MORPHOLOGY; STRESS ANALYSIS;

ADHESION STRENGTH; CU INTERCONNECTS; CU SEED LAYERS; STRESS AND MULTI-STACKS;

DIELECTRIC FILMS;

EID: 3142733742     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.05.003     Document Type: Article

References (19)

1. L. Graham, T. Ritxdorf, Semiconductor Fabtech, 11th ed., 1999, pp. 279-282.
2. Jakkaraju R., Greer A.L. J. Mater. Sci.: Mater. Electron. 2003;285-294.
3. S. Balakumar, T. Hara, in: Proceedings of the 20th VMIC Conference, 2003, pp. 125-134.
4. Hara T., Toida H. Electrochem. Solid State Lett. 5(10):2002;C102-C105.
5. T. Hara, Y. Shimura, in: Proceedings of the 20th VMIC Conference, pp. 303-306, 2003.
6. H. Lee, S.D. Lopatin, S.S. Wong, in: MRS Fall Meeting, Symposium A, Paper A1.9, Boston, December 1, 1998.
7. Ueno K., Ritzdorf T., Scott G. J. Appl. Phys. 86(9):1999;4930-4935.
8. Zielinski E.M., Vinci R.P. J. Appl. Phys. 76(8):1994;4516-4523.
9. S.S. Wong, C. Ryu, H. Lee, IEEE Proc. IITC (1998) 98-107.
10. Thompson Carl V. Ann. Rev. Mater. Sci. 1990;245-268.
11. Ko Y.K., Jang J.H. J. Mater. Sci.: Mater. Electron. 14:2003;103-108.
12. Ryu C., Loke A., Nogami T., Wong S.S. Int. Reliability Phys. Symp. 1997;201-205.
13. Ko Y.K., Jang J.H. J. Mater. Sci.: Mater. Electron. 14:2003;103-108.
14. Seah C.H., Miradha S., Chan L.H. J. Vac. Sci. Technol. A. 17(4):1999;1963-1967. Jul/Aug.
15. Brongersma S.H., Kerr E., Vervoort I. J. Mater. Res. 17(3):2002;582-589. Mar.
16. Li C.Y., Zhang D.H., Wu J.J. Int. J. Modern Phys. B. 16(1 and 2):2002;186-196.
17. Hara T., Toida H., Shimura Y. Electrochem. Solid State Lett. 6(7):2003;G98-G100.
18. Okinaka Y., Nakahara S. J. Electrochem. Soc. 123:1976;475-483.
19. Nakahara S., Okinaka Y. Acta Metall. 31:1983;713-720.