Effect of slurry selectivity on dielectric erosion and copper dishing in copper chemical-mechanical polishing

CIRP Annals - Manufacturing Technology

Volumn 53, Issue 1, 2004, Pages 463-466

  Noh, K ^a   Saka, N ^a   Chun, J H ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

Chemical Mechanical Polishing; Integrated Circuits; Semiconductor Manufacturing

Indexed keywords

COPPER; DIELECTRIC FILMS; ELECTROMIGRATION; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; ULSI CIRCUITS;

DIELECTRIC EROSION; SLURRY SELECTIVITY;

CHEMICAL MECHANICAL POLISHING;

EID: 3142666962     PISSN: 00078506     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0007-8506(07)60740-9     Document Type: Article

References (13)

1. International Technology Roadmap for Semiconductors 2003 Edition - Interconnect, ITRS website http://public.itrs.net
2. Saka, N., Lai, J.-Y., Chun, J.-H. and Suh, N. P., 2001, Mechanisms of the Chemical Mechanical Polishing (CMP) Process in Integrated Circuit Fabrication, Annals of the CIRP, 50/1: 233-238.
3. Chekina, O. G., Keer, L. M. and Liang, H., 1998, Wear-Contact Problems and Modeling of Chemical Mechanical Polishing, J. Electrochemical Soc., 145: 2100-2106.
4. Byrne, G., Mullany, B. and Young, P., 1999, Effect of Pad Wear on the Chemical Mechanical Polishing of Silicon Wafers, Annals of the CIRP, 48/1: 143-146.
5. Warnock, J., 1991, A Two-Dimensional Process Model for Chemimechanical Polishing Planarization, J. Electrochemical Soc., 138: 2398-2402.
6. Singh, R. K., Lee, S., Choi, K., Basim, G. B., Choi, W., Chen, Z. and Moudgil, B. M., 2002, Fundamentals of Slurry Design for CMP of Metal and Dielectric Materials, MRS Bulletin, 10: 752-760.
7. Morrison, B., Joshi, S. and Tolles, R., 2000, Copper and STI CMP Technology: the Challenges and the Cost, Future Fab International, 11: 269-273.
8. Preston, F. W., 1927, The Theory and Design of Plate Glass Polishing Machines, J. Soc Glass Technology, 11: 214-256.
9. Evans, C. J., Paul, E., Dornfeld, D., Lucca, D. A., Byrne, G., Tricard, M., Klocke, F., Dambon, O. and Mullany, B. A., 2003, Material Removal Mechanisms in Lapping and Polishing, Annals of the CIRP, 52/2: 611-633.
10. Noh, K., Saka, N. and Chun, J.-H., 2003, Modeling Dielectric Erosion in Multi-Step Copper Chemical-Mechanical Polishing, ECS Fall Meeting, M1-934.
11. Vlassak, J. J., 2001, A Contact-Mechanics Based Model for Dishing and Erosion in Chemical-Mechanical Polishing, Mat. Res. Soc. Symp. Proc., 671: M4.61-M4.66.
12. Fu, G. and Chandra, A., 2003, An Analytical Dishing and Step Height Reduction Model for Chemical Mechanical Planarization (CMP), IEEE Trans. Semiconduct. Manufact, 16/3: 477-485.
13. Park, T., Tugbawa, T. and Boning, D., 2000, Overview of Methods for Characterization of Pattern Dependencies in Copper CMP, Proc. CMP-MIC Conf., 196-205.