Full copper electrochemical mechanical planarization (Ecmp) as a technology enabler for the 45 and 32nm nodes

Proceedings of the IEEE 2007 International Interconnect Technology Conference - Digest of Technical Papers

Volumn , Issue , 2007, Pages 70-72

  Mellier, M ^a   Berger, T ^b   Duru, R ^b   Zaleski, M ^c   Luche, M C ^c   Rivoire, M ^b   Goldberg, C ^c   Wyborn, G ^b   Chang, K L ^d   Wang, Y ^d   Ripoche, V ^d   Tsai, S ^d   Thothadri, M ^d   Hsu, W Y ^d   Chen, L ^d  

^a NXP SEMICONDUCTORS   (France)

^b STMICROELECTRONICS   (France)

^c FREESCALE SEMICONDUCTOR INC   (United States)

^d APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34748889087     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iitc.2007.382352     Document Type: Conference Paper

References (3)

1. L. Economikos et al., "Integrated electro-chemical mechanical planarization (Ecmp) for future generation device technology", IBM Microelectronics, IITC 2004.
2. O. Hinsinger et al., IEDM 2004.
3. F. Liu et al, "Cu planarization in electrochemical mechanical planarization", Journal of the Electrochemical Society, 2006, vol. 153 (6).