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Electrochemical and Solid-State Letters

Volumn 7, Issue 1, 2004, Pages

A Novel Approach of Fabricating Germanium Nanocrystals for Nonvolatile Memory Application

(6) Chang, T C a Yan, S T b Liu, P T c Chen, C W b Lin, S H b Sze, S M b,c

a NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

b NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

c NATIONAL NANO DEVICE LABORATORIES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; COULOMB BLOCKADE; ELECTRONS; FLASH MEMORY; GERMANIUM; LEAKAGE CURRENTS; OXIDATION; THRESHOLD VOLTAGE;

CIRCUIT DESIGNS; NONVOLATILE MEMORY DEVICES;

NANOSTRUCTURED MATERIALS;

EID: 0942277789 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.1627453 Document Type: Article

Times cited : (49)

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