Fast erasing and highly reliable MONOS type memory with HfO2 high-k trapping layer and SI3N4/SiO2 tunneling stack

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Wang, Y Q ^a   Gao, D Y ^a   Hwang, W S ^a   Shen, C ^a   Zhang, G ^b   Samudra, G ^a   Yeo, Y C ^a   Yoo, W J ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM COMPOUNDS; SILICON;

ELECTRON DEVICES;

EID: 46049091595     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346948     Document Type: Conference Paper

References (6)

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3. K. K. Likharev, "Layered tunnel barriers for nonvolatile memory devices," Appl. Phy. Lett., vol. 73, pp. 2137-2139, Oct. 1998.
4. 3 with TaN metal gate for multigiga bit Flash memories, " in IEDM Tech. Dig., 2003, pp. 26.5.1-26.5.4.
5. Y. Shin, J. Choi, C. Kang, K.-T. Park, J.-S. Lee, J. Sel, V. Kim, B. Choi, J. Sim, D. Kim, H.-J. Cho, and K. Kim "A Novel, NAND-type MONOS Memory using 63nm Process Technology for Multi-Gigabit Flash EEPROMs" in IEDM Tech. Dig. pp.337-340, 2005.
6. H. Bachhofer, H.Reisinger, E. Bertagnolli and H. von Philipsborn, "Tran sient conduction in multidielectric silicon-oxide-nitride-oxide- semiconductor structures" J. Appl. Phys., vol. 89, pp. 2791-2800, 2001.