25 nm planar bulk SONOS-type memory with double tunnel junction

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Ohba, Ryuji ^a   Mitani, Yuichiro ^a   Sugiyama, Naoharu ^a   Fujita, Shinobu ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; NANOTECHNOLOGY; SILICON; TUNNELS;

CHARGE RETENTION; DEVICE SCALING; GA TE LENGTHS; NANO-CRYSTALLINE LAYER; QUANTUM-CONFINEMENT; SI-NANOCRYSTAL; SI-NANOCRYSTALS; TUNNEL OXIDES;

TUNNEL JUNCTIONS;

EID: 46049118445     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346945     Document Type: Conference Paper

References (7)

1. R. Ohba et al. Digest of VLSI Tech. 2003 p.35
2. R. Ohba et al.,: IEEE Trans. on ED, 49 (2002) 1392
3. H.Grabert et al., Single charge tunneling (Plemum) (1992)
4. R. Ohba et al.,: IEDM Tech Dig. p.897 (2004)
5. R. Ohba et al.,: IEDM Tech. Dig., p.873 (2005)
6. A. Hokazono et al.,: IEDM Tech. Dig., p.639 (2002)
7. S. Inaba et al,. IEDM Tech. Dig. (2001) p.641