Characteristics of silicon nanocrystal floating gate memory using amorphous carbon/SiO2 tunnel barrier

Applied Physics Letters

Volumn 81, Issue 27, 2002, Pages 5186-5188

  Baik, Seung Jae ^a   Lim, Koeng Su ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CAPACITANCE; CARBON; ELECTRIC CHARGE; ELECTRIC POTENTIAL; GATES (TRANSISTOR); INTERFACES (MATERIALS); SILICON;

CONDUCTION BANDS;

NANOSTRUCTURED MATERIALS;

EID: 0347926384     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1533119     Document Type: Article

References (13)

1. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbé, and K. Chan, Appl. Phys. Lett. 68, 1377 (1996).
2. S. Tiwari, F. Rana, K. Chan, L. Shi, and H. Hanafi, Appl. Phys. Lett. 69, 1232 (1996).
3. Y. Shi, K. Saito, H. Ishikuro, and T. Hiramoto, J. Appl. Phys. 84, 2358 (1998).
4. K. K. Likharev, Appl. Phys. Lett. 73, 2137 (1998).
5. Y. Matsumoto, T. Hanajiri, T. Toyabe, and T. Sugano, Jpn. J. Appl. Phys., Part 1 35, 1126 (1996).
6. I. Kim, S. Han, H. Kim, J. Lee, B. Choi, S. Hwang, D. Ahn, and H. Shin, Tech. Dig. - Int. Electron Devices Meet. 1998, 111 (1998).
7. J. H. Jang and K. S. Lim, Jpn. J. Appl. Phys., Part 1 35, 5625 (1996).
8. Z. Cui, J. M. Madsen, and C. G. Takoudis, J. Appl. Phys. 87, 8181 (2000).
9. W. Y. Cho and K. S. Lim, Jpn. J. Appl. Phys., Part 2 36, L1188 (1997).
10. S. J. Baik, J. H. Choi, J. Y. Lee, and K. S. Lim, Symposium F5.15, Material Research Society 2000 Fall Meeting, Boston, 2000.
11. J. Robertson and W. Milne, J. Non-Cryst. Solids 227-230, 558 (1998).
12. J. Shafer, J. Ristein, S. Miyazaki, and L. Ley, J. Vac. Sci. Technol. A 15, 408 (1997).
13. S. Paul and F. J. Clough, Appl. Phys. Lett. 78, 1415 (2001).