Long-term electron leakage mechanisms through ONO interpoly dielectric in stacked-gate EEPROM cells

IEEE Transactions on Electron Devices

Volumn 51, Issue 12, 2004, Pages 2048-2053

  Kim, Jang Han ^a   Choi, Jung Bum ^a  

^a Chungbuk National University   (South Korea)

Author keywords

Charge leakage; Charge leakage model; Charge loss mechanisms; CHEI programming; Data retention; Device lifetime; EEPROM; Electron traps; High temperature accelerated test; Leakage current; Long term electron leakage mechanisms; Nonvolatile memory; Oxide Nitride Oxide (ONO) interpoly dielectric; Reliability; Stacked gate Flash EPROM cells; Thermally activated direct tunneling; Thermionic emission mechanism; Threshold voltage shift; Tunnel oxide

Indexed keywords

DIELECTRIC FILMS; ELECTRON DEVICE TESTING; ELECTRON TRAPS; ELECTRON TUNNELING; GATES (TRANSISTOR); HIGH TEMPERATURE PROPERTIES; LEAKAGE CURRENTS; NITRIDES; OXIDES; RELIABILITY; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

CHARGE LEAKAGE; CHARGE LOSS MECHANISMS; DATA RETENTION; DEVICE LIFETIME; EEPROM; ELECTRON LEAKAGE MECHANISMS; HIGH TEMPERATURE ACCELERATED TEST; OXIDE-NITRIDE-OXIDE INTERPOLY DIELECTRIC; STACKED GATE FLASH DEVICES; THERMALLY ACTIVATED DIRECT TUNNELING;

FLASH MEMORY;

EID: 10644292653     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.838446     Document Type: Article

References (13)

1. C. S. Pan, K. Wu, P. Freiberger, A. Chatterjee, and G. Sery, "A scaling methodology for oxide-nitride-interpoly dielectric for EPROM application," IEEE Trans. Electron Devices, vol. 37, pp. 1439-1443, June 1990.
2. S. Moil, Y. Kaneko, N. Arai, Y. Ohshima, H. Araki, K. Narita, E. Sakagami, and K. Yoshikawa, "Reliability study of thin inter-poly dielectrics for nonvolatile memory application," in Proc. IRPS, 1990, pp. 132-144.
3. B. D. Salvo, G. Ghibaudo, G. Pananakakis, G. Reimbold, F. Mondond, B. Guillaumot, and P. Candelier, "Experimental and theoretical investigation of nonvolatile memory data-retention," IEEE Trans. Electron Devices, vol. 46, pp. 1518-1524, July 1999.
4. S. J. Shen, C. C. H. Hsu, and M. S. Liang, "Optimization of program threshold window from understanding of novel fast charge loss in non-volatile memory," Jpn J. Appl. Phys., vol. 37, no. 1, p. 4306, 1998.
5. J. H. Kim, J. B. Choi, B. J. Shin, and K. H. Park, "An empirical model for charge leakage through oxide-nitride-oxide interpoly dielectric in stacked-gate Flash memory devices," Semicond. Sci. Technol., vol. 18, no. 2, pp. 158-162, Feb. 2003.
6. B. J. Shin, K. H. Park, J. H. Kim, and J. B. Choi, "Source-bias program characteristics of a submicron stacked-gate Flash EEPROM cell," J. Korean Phys. Soc., vol. 39, no. 2, pp. 374-377, Aug. 2001.
7. K. Wu, C. S. Pan, J. J. Shaw, P. Freiberger, and G. Sery, "A model for EPROM intrinsic charge loss through oxide-nitride-oxide (ONO) interpoly dielectric," in Proc. IRPS, 1990, pp. 145-149.
8. 2 dielectric layer for memory capacitor," in Proc. IRPS, 1985, pp. 18-23.
9. 4 in oxide/nitride/oxide for metal/oxide/nitride/ oxide/silicon nonvolatile memory," Jpn. J. Appl. Phys., pt. 1, vol. 38, no. 3A, pp. 1441-1447, Mar. 1999.
10. C. Pan, K. Wu, and G. Sery, "Physical origin of long-term charge loss in floating-gate EPROM with an interpoly oxide-nitride-oxide stacked dielectric," IEEE Electron Device Lett., vol. 12, pp. 51-53, Feb. 1991.
11. S. Mori, E. Sakagami, Y. Kaneko, Y. Oshima, N. Arai, and K. Yoshikawa, "Bottom-oxide scaling for thin nitride/oxide interpoly dielectric in stacked-gate nonvolatile memory cells," IEEE Trans. Electron Devices vol. 39, pp. 283-291, Feb. 1992.
12. C. Pan, K. Wu, D. Chin, G. Sery, and J. Kiely, "High-temperature charge loss mechanism in a floating-gate EPROM with an oxide-nitride-oxide (ONO) interpoly stacked dielectric," IEEE Electron Device Lett., vol. 12, pp. 506-509, Sept. 1991.
13. M. Hermann and A. Schenk, "Field and high-temperature dependence of the long term charge loss in erasable programmable read only memories: Measurements and modeling," J. Appl. Phys., vol. 77, no. 9, pp. 4522-4540, May 1995.